Manufacturer Part Number
MT53E512M32D2NP-046 WT:E
Manufacturer
Micron Technology
Introduction
The MT53E512M32D2NP-046 WT:E is a high-performance, low-power DRAM memory module designed for mobile and embedded applications. With its 16Gbit capacity and LPDDR4 technology, this memory solution offers exceptional performance and power efficiency to meet the demands of modern mobile devices.
Product Features and Performance
16Gbit memory capacity
LPDDR4 SDRAM technology
133 GHz clock frequency
1V operating voltage
Wide operating temperature range of -30°C to 85°C
512M x 32 memory organization
Surface mount package (200-WFBGA)
Product Advantages
Optimized for mobile and embedded applications
Excellent power efficiency for extended battery life
High-speed performance to support demanding applications
Wide temperature range for versatile deployment
Key Reasons to Choose This Product
Industry-leading DRAM technology from a trusted manufacturer
Exceptional performance and power efficiency
Robust design for reliable operation in diverse environments
Seamless integration with a wide range of mobile and embedded platforms
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry standards and regulations
Robust design for enhanced reliability and durability
Compatibility
This DRAM module is designed to be compatible with a variety of mobile and embedded platforms that support the LPDDR4 memory standard.
Application Areas
Smartphones and tablets
Portable gaming devices
Wearable electronics
Industrial and automotive embedded systems
Product Lifecycle
The MT53E512M32D2NP-046 WT:E is an obsolete product, meaning it is no longer in active production. However, Micron Technology may still have available inventory or equivalent/alternative models that can serve as replacements. Customers are advised to contact our website's sales team for the most up-to-date information on availability and alternative solutions.
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MT53E512M32D2NP-046 WTE